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Matsubara, Akihiro; Fujita, Natsuko; Kimura, Kenji
no journal, ,
The feasibility of a surface stripper proposed for downsized 
C-AMS systems is studied numerically. The stripping is a key technique to dissociate interfering molecular isobars such as 
CH
and 
CH. The model used in the series of studies is that CH molecules are dissociated by collision with surface electrons in the case of the grazing incidence of the CH with the energy of tens of keV onto a single crystal surface. For evaluating the survival probability of the CH in the present study, we assumed that the direction of the molecular axis is randomly distributed, and calculated the trajectory of its barycenter by using a potential force acting individually on the C and H atoms. The obtained survival probability falls to below 10
at which the level is required for the practical use. This suggests the sufficient dissociation capability of the surface stripper.
Fujita, Natsuko; Matsubara, Akihiro; Miyake, Masayasu*; Nishio, Tomohiro*; Ogawa, Yumi*; Kimura, Kenji; Watanabe, Takahiro; Kokubu, Yoko; Shimada, Akiomi
no journal, ,
The Tono Geoscience Center has three AMSs, of which two are for dating actual samples and one is for AMS technology development. In the presentation, we will report on the status of research and development related to these devices in 2020.
Yasuda, Satoshi; Matsushima, Hisayoshi*; Asaoka, Hidehito; Fukutani, Katsuyuki*
no journal, ,
no abstracts in English
Hagura, Naoto*; Watanabe, So
no journal, ,
no abstracts in English
Osaka, Masahiko
no journal, ,
This presentation recommends required debris analysis in relation with issues for the retrieval, storage management, processing and disposal, and ascertainment of the cause of the Fukushima Daiichi Nuclear Power Station accident.
and SR ON-OFF on band bending at SiO/Si(001) interfacesTsuda, Yasutaka; Ogawa, Shuichi*; Yoshigoe, Akitaka; Sakamoto, Tetsuya; Takakuwa, Yuji*
no journal, ,
no abstracts in English
1 surface oxidation at room temperatureYoshigoe, Akitaka; Tsuda, Yasutaka; Tominaga, Aki; Sakamoto, Tetsuya; Ogawa, Shuichi*; Takakuwa, Yuji*
no journal, ,
In Society 5.0, nanometer-scaled devices with high performance and low-power are required. Since silicon (Si) based metal-oxide-semiconductor (MOS) transistors play an important role in the application of information and communication technology, precise control and understanding of Si surface oxidation is still important. However, the debate on the Si surface oxidation by molecular oxygen still remains. In our previous study, we found that the O1s photoelectron spectra of room temperature oxidation of Si(001)21 surface show satellite peaks indicating molecularly adsorbed oxygen. In this study, the role of molecularly adsorbed oxygen in the oxidation reaction in relation to the translational energy of incident oxygen molecules was investigated by synchrotron radiation real-time photoemission spectroscopy. All experiments were conducted using the surface experimental station of JAEA's BL23SU at SPring-8. Even on a p-type Si(001) surface under molecular beam irradiation with the translational energy of 0.06 eV, a satellite peak was clearly observed at a binding energy of about 4.45 eV lower than the main peak (oxygen atom in Si-O-Si). The role of molecularly adsorption in the oxidation reaction will be discussed from the results of signal changes with the progress of oxidation times.
Sakai, Takaki*; Yamanouchi, Michihiko*; Araki, Yasufumi; Uemura, Tetsuya*; Ota, Hiromichi*; Ieda, Junichi
no journal, ,
Sumiya, Masatomo*; Tsuda, Yasutaka; Sakamoto, Tetsuya*; Sumita, Masato*; Sang, L.*; Harada, Yoshitomo*; Yoshigoe, Akitaka
no journal, ,
no abstracts in English